While multiple vendors have started working on 3D or multi-layer flash memory, Samsung is sticking to the old guns with improved technology. Most NAND flash available today are 2bit – meaning that they store up to two bits of data per cell. As compared to multi-level flash, single-level cell (SLC) flash possess higher endurance and performance making them more costly.
According to Kathy Choe Thomas, senior manager for NAND product marketing at Samsung Semiconductor, the new 3bit MLC flash chips will be used in solid state drives; for storage in next-generation smartphones and tablets.
Samsung has claimed that the 128Gb chips so developed are of the highest density ever and also aces performance levels when it comes to data transfer rates at 400 Mbps on the toggle DDR 2.0 interface.
3bit per cell NAND technology also sometimes referred to as triple-level cell (TLC) flash has a requirement of greater error correction code (ECC) because more data is stored per cell as compared to 2bit cell NAND – the reason being because of greater data storage, chances of data leakage through to neighbouring cells and data corruption are higher.
Thomas has assured that Samsung’s NAND controller will be able to manage additional ECC requirements of the TLC flash with ease.